Abstract
The surface and interface electronic structure of mismatched In xAl1-xAs epitaxial layers grown by molecular beam epitaxy on InP have been investigated using surface photovoltage spectroscopy. The crystalline structure of the epilayers was also examined by double-crystal x-ray diffraction. For coherently strained layers, only a few gap states are identified. Highly strained samples with inferior crystalline quality, as judged by a broadened x-ray diffraction peak and the absence of Pendellosung fringes, display a rich spectrum of states in the band gap. Some of the states are close to the surface while others are located in the vicinity of the InAlAs/InP heterointerfaces.
Original language | English |
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Pages (from-to) | 7163-7169 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 78 |
Issue number | 12 |
DOIs | |
State | Published - 1995 |