Surface photovoltage spectroscopy of InxAl1-xAs epilayers

L. Burstein*, Yoram Shapira, B. R. Bennett, J. A. Del Alamo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The surface and interface electronic structure of mismatched In xAl1-xAs epitaxial layers grown by molecular beam epitaxy on InP have been investigated using surface photovoltage spectroscopy. The crystalline structure of the epilayers was also examined by double-crystal x-ray diffraction. For coherently strained layers, only a few gap states are identified. Highly strained samples with inferior crystalline quality, as judged by a broadened x-ray diffraction peak and the absence of Pendellosung fringes, display a rich spectrum of states in the band gap. Some of the states are close to the surface while others are located in the vicinity of the InAlAs/InP heterointerfaces.

Original languageEnglish
Pages (from-to)7163-7169
Number of pages7
JournalJournal of Applied Physics
Issue number12
StatePublished - 1995


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