Abstract
Surface photovoltage spectroscopy has been used in order to investigate surface states at Al/n-GaAs (110), Au/n-GaAs (110) and Al/p-InP (110), Au/p-InP (110),(100) interfaces. Our results show formation of metal-induced surface states, which can be correlated with Fermi level pinning positions. The observed energy positions are found to be in good agreement with electrically measured Schottky barrier heights. The results obtained for these metals and the different surface types are discussed and compared to published data.
| Original language | English |
|---|---|
| Pages (from-to) | 2466-2468 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 57 |
| Issue number | 23 |
| DOIs | |
| State | Published - 1990 |