Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

S. Solodky; A. Khramtsov; T. Baksht; M. Leibovitch; S. Hava; Yoram Shapira

doi:10.1063/1.1613794

Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

S. Solodky^*, A. Khramtsov, T. Baksht, M. Leibovitch, S. Hava, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors was analyzed. The effects of the transistor top and bottom delta-doping levels, and surface charge on the spectrum features were studied using numerical simulations. It was found that devices produced on these structures showed maximum drain currents, which correlated with the δ_top values calculated using the model.

Original language	English
Pages (from-to)	2465-2467
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1613794
State	Published - 22 Sep 2003

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@article{05c857c3a8be4fd39d40190966c3bbdb,

title = "Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors",

abstract = "The surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors was analyzed. The effects of the transistor top and bottom delta-doping levels, and surface charge on the spectrum features were studied using numerical simulations. It was found that devices produced on these structures showed maximum drain currents, which correlated with the δtop values calculated using the model.",

author = "S. Solodky and A. Khramtsov and T. Baksht and M. Leibovitch and S. Hava and Yoram Shapira",

year = "2003",

month = sep,

day = "22",

doi = "10.1063/1.1613794",

language = "אנגלית",

volume = "83",

pages = "2465--2467",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

AU - Solodky, S.

AU - Khramtsov, A.

AU - Baksht, T.

AU - Leibovitch, M.

AU - Hava, S.

AU - Shapira, Yoram

PY - 2003/9/22

Y1 - 2003/9/22

N2 - The surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors was analyzed. The effects of the transistor top and bottom delta-doping levels, and surface charge on the spectrum features were studied using numerical simulations. It was found that devices produced on these structures showed maximum drain currents, which correlated with the δtop values calculated using the model.

AB - The surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors was analyzed. The effects of the transistor top and bottom delta-doping levels, and surface charge on the spectrum features were studied using numerical simulations. It was found that devices produced on these structures showed maximum drain currents, which correlated with the δtop values calculated using the model.

UR - http://www.scopus.com/inward/record.url?scp=0142055971&partnerID=8YFLogxK

U2 - 10.1063/1.1613794

DO - 10.1063/1.1613794

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0142055971

SN - 0003-6951

VL - 83

SP - 2465

EP - 2467

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

Abstract

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