Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

S. Solodky, A. Khramtsov, T. Baksht, M. Leibovitch, S. Hava, Yoram Shapira

Research output: Contribution to journalArticlepeer-review

Abstract

The surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors was analyzed. The effects of the transistor top and bottom delta-doping levels, and surface charge on the spectrum features were studied using numerical simulations. It was found that devices produced on these structures showed maximum drain currents, which correlated with the δtop values calculated using the model.

Original languageEnglish
Pages (from-to)2465-2467
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number12
DOIs
StatePublished - 22 Sep 2003

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