Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure

N. Ashkenasy*, M. Leibovitch, Yoram Shapira, Fred H. Pollak, G. T. Burnham, X. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An InGaAs/GaAs/AlGaAs single quantum well graded-index-of-refraction separate-confinement hetero-structure laser has been analyzed using surface photovoltage spectroscopy (SPS) in a contactless, nondestructive way at room temperature. Numerical simulation of the resulting spectrum made it possible to extract growth parameters, such as the InGaAs well width, the well and cladding compositions, as well as important electro-optic structure data of this device, including the lasing wavelength and built-in electric Held. The results highlight the power of SPS in obtaining performance parameters of actual laser devices, containing two-dimensional structures, in a contactless, nondestructive way.

Original languageEnglish
Pages (from-to)1146-1149
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number2
DOIs
StatePublished - 15 Jan 1998

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