TY - JOUR
T1 - Surface electronic structure of p-InP using temperature-controlled surface photovoltage spectroscopy
AU - Kinrot, N.
AU - Shapira, Yoram
PY - 2002/6/15
Y1 - 2002/6/15
N2 - Samples of p-InP (100) have been investigated using temperature-controlled surface photovoltage spectroscopy (T-SPS), in conjunction with time-resolved photoluminescence and intensity-resolved surface photovolt-age measurements. In addition to the previously reported three gap states, attributed to excess surface P, adsorbed O, and Fe unintentional doping, T-SPS reveals a gap state, also attributed to Fe, situated 0.79 eV below the conduction-band minimum. The energy distribution of the latter state has been investigated by measuring its population as a function of temperature and shows good agreement with theory. A direct observation of the spectral blueshift of the InP band gap by T-SPS shows very good agreement with theory.
AB - Samples of p-InP (100) have been investigated using temperature-controlled surface photovoltage spectroscopy (T-SPS), in conjunction with time-resolved photoluminescence and intensity-resolved surface photovolt-age measurements. In addition to the previously reported three gap states, attributed to excess surface P, adsorbed O, and Fe unintentional doping, T-SPS reveals a gap state, also attributed to Fe, situated 0.79 eV below the conduction-band minimum. The energy distribution of the latter state has been investigated by measuring its population as a function of temperature and shows good agreement with theory. A direct observation of the spectral blueshift of the InP band gap by T-SPS shows very good agreement with theory.
UR - http://www.scopus.com/inward/record.url?scp=0037098495&partnerID=8YFLogxK
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AN - SCOPUS:0037098495
SN - 0163-1829
VL - 65
SP - 2453031
EP - 2453035
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
M1 - 245303
ER -