Surface electronic structure of p-InP using temperature-controlled surface photovoltage spectroscopy

N. Kinrot, Yoram Shapira*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Samples of p-InP (100) have been investigated using temperature-controlled surface photovoltage spectroscopy (T-SPS), in conjunction with time-resolved photoluminescence and intensity-resolved surface photovolt-age measurements. In addition to the previously reported three gap states, attributed to excess surface P, adsorbed O, and Fe unintentional doping, T-SPS reveals a gap state, also attributed to Fe, situated 0.79 eV below the conduction-band minimum. The energy distribution of the latter state has been investigated by measuring its population as a function of temperature and shows good agreement with theory. A direct observation of the spectral blueshift of the InP band gap by T-SPS shows very good agreement with theory.

Original languageEnglish
Article number245303
Pages (from-to)2453031-2453035
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number24
StatePublished - 15 Jun 2002

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