TY - GEN
T1 - Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations
AU - Nallatamby, Jean Christophe
AU - Silva Dos Santos, Jose Anderson
AU - Raja, P. Vigneshwara
AU - Bouslama, Mohamed
AU - Sommet, Raphael
N1 - Publisher Copyright:
© 2022 European Microwave Association (EuMA).
PY - 2022
Y1 - 2022
N2 - In this paper, the trap signatures located at the GaN cap/SiN interface and in the GaN buffer are clearly identified in the Fe-doped AlGaN/GaN HEMT device by means of low frequency (LF) S-parameter characteristics. For that, LF S-parameter TCAD Sentaurus physics-based 2D simulations are performed for different temperatures ranging from 25\mathrmC to 75\mathrmC. In fact, the imaginary part of Y_22 allows to extract the buffer trap parameters, while the imaginary part ofY_21 provides a quantitative information of the traps located at both surface and buffer regions. An excellent agreement between measurement and simulation ofY_21 parameter is obtained in this work. An activation energy ofEmathrma=0.45 eV and a cross section around σn=3× 10-16cm2 are identified for buffer traps. The computed parameters for the surface traps are ED =∼ 0.3 eV and σ 0=∼ 5× 10-18cm2.
AB - In this paper, the trap signatures located at the GaN cap/SiN interface and in the GaN buffer are clearly identified in the Fe-doped AlGaN/GaN HEMT device by means of low frequency (LF) S-parameter characteristics. For that, LF S-parameter TCAD Sentaurus physics-based 2D simulations are performed for different temperatures ranging from 25\mathrmC to 75\mathrmC. In fact, the imaginary part of Y_22 allows to extract the buffer trap parameters, while the imaginary part ofY_21 provides a quantitative information of the traps located at both surface and buffer regions. An excellent agreement between measurement and simulation ofY_21 parameter is obtained in this work. An activation energy ofEmathrma=0.45 eV and a cross section around σn=3× 10-16cm2 are identified for buffer traps. The computed parameters for the surface traps are ED =∼ 0.3 eV and σ 0=∼ 5× 10-18cm2.
KW - AlGaN/GaN HEMT
KW - Fe-doping
KW - S-parameter
KW - TCAD simulation
KW - buffer trap
KW - surface donor
UR - http://www.scopus.com/inward/record.url?scp=85141872257&partnerID=8YFLogxK
U2 - 10.23919/EuMIC54520.2022.9923517
DO - 10.23919/EuMIC54520.2022.9923517
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AN - SCOPUS:85141872257
T3 - 2022 17th European Microwave Integrated Circuits Conference, EuMIC 2022
SP - 1
EP - 4
BT - 2022 17th European Microwave Integrated Circuits Conference, EuMIC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th European Microwave Integrated Circuits Conference, EuMIC 2022
Y2 - 26 September 2022 through 27 September 2022
ER -