Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination

I. Shafir; M. Katz; A. Sher; A. Raizman; A. Zussman; M. Nathan

doi:10.1088/0268-1242/25/4/045004

Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination

I. Shafir^*, M. Katz, A. Sher, A. Raizman, A. Zussman, M. Nathan

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Novel surface treatments for an InAs_0.91Sb_0.09 p-n junction grown on GaSb by MOCVD are proposed and demonstrated. Exposure of the p-n junction to argon ion plasma followed by etching with tartaric acid reduces the dark currents by five orders of magnitude. An additional reduction by two orders of magnitude in the dark current is achieved by illuminating the sample with white light. A mid-wavelength infrared photodetector based on the so treated p-n junction exhibits a high zero-bias resistance-area product (R ₀A) of 2.7 × 10⁷ Ω cm² and an internal quantum efficiency of 70% at 77 K. The measured BLIP temperature is 170 K and a high detectivity value (D* _BLIP) of 4.03 × 10¹¹ cm Hz^1/2 W^-1 is observed at 3.7 νm. The surface treatment results indicate that the device performance is limited by bulk material properties.

Original language	English
Article number	045004
Journal	Semiconductor Science and Technology
Volume	25
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/25/4/045004
State	Published - 2010

Access to Document

10.1088/0268-1242/25/4/045004

Cite this

@article{ace48cb1fa804a57a11237a5fb4052be,

title = "Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination",

abstract = "Novel surface treatments for an InAs0.91Sb0.09 p-n junction grown on GaSb by MOCVD are proposed and demonstrated. Exposure of the p-n junction to argon ion plasma followed by etching with tartaric acid reduces the dark currents by five orders of magnitude. An additional reduction by two orders of magnitude in the dark current is achieved by illuminating the sample with white light. A mid-wavelength infrared photodetector based on the so treated p-n junction exhibits a high zero-bias resistance-area product (R 0A) of 2.7 × 107 Ω cm2 and an internal quantum efficiency of 70% at 77 K. The measured BLIP temperature is 170 K and a high detectivity value (D* BLIP) of 4.03 × 1011 cm Hz1/2 W-1 is observed at 3.7 νm. The surface treatment results indicate that the device performance is limited by bulk material properties.",

author = "I. Shafir and M. Katz and A. Sher and A. Raizman and A. Zussman and M. Nathan",

year = "2010",

doi = "10.1088/0268-1242/25/4/045004",

language = "אנגלית",

volume = "25",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination

AU - Shafir, I.

AU - Katz, M.

AU - Sher, A.

AU - Raizman, A.

AU - Zussman, A.

AU - Nathan, M.

PY - 2010

Y1 - 2010

N2 - Novel surface treatments for an InAs0.91Sb0.09 p-n junction grown on GaSb by MOCVD are proposed and demonstrated. Exposure of the p-n junction to argon ion plasma followed by etching with tartaric acid reduces the dark currents by five orders of magnitude. An additional reduction by two orders of magnitude in the dark current is achieved by illuminating the sample with white light. A mid-wavelength infrared photodetector based on the so treated p-n junction exhibits a high zero-bias resistance-area product (R 0A) of 2.7 × 107 Ω cm2 and an internal quantum efficiency of 70% at 77 K. The measured BLIP temperature is 170 K and a high detectivity value (D* BLIP) of 4.03 × 1011 cm Hz1/2 W-1 is observed at 3.7 νm. The surface treatment results indicate that the device performance is limited by bulk material properties.

AB - Novel surface treatments for an InAs0.91Sb0.09 p-n junction grown on GaSb by MOCVD are proposed and demonstrated. Exposure of the p-n junction to argon ion plasma followed by etching with tartaric acid reduces the dark currents by five orders of magnitude. An additional reduction by two orders of magnitude in the dark current is achieved by illuminating the sample with white light. A mid-wavelength infrared photodetector based on the so treated p-n junction exhibits a high zero-bias resistance-area product (R 0A) of 2.7 × 107 Ω cm2 and an internal quantum efficiency of 70% at 77 K. The measured BLIP temperature is 170 K and a high detectivity value (D* BLIP) of 4.03 × 1011 cm Hz1/2 W-1 is observed at 3.7 νm. The surface treatment results indicate that the device performance is limited by bulk material properties.

UR - http://www.scopus.com/inward/record.url?scp=77950958280&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/25/4/045004

DO - 10.1088/0268-1242/25/4/045004

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:77950958280

SN - 0268-1242

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 045004

ER -

Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination

Abstract

Access to Document

Other files and links

Fingerprint

Cite this