Suppression of erased state Vt drift in two-bit per cell SONOS memories

Yakov Roizin; Evgeny Pikhay; Micha Gutman

doi:10.1109/LED.2004.840711

Suppression of erased state V_t drift in two-bit per cell SONOS memories

Yakov Roizin^*, Evgeny Pikhay, Micha Gutman

^*Corresponding author for this work

TOWER Semiconductor Ltd.

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this letter, we report on the suppression of the erased state threshold voltage drift (room temperature V_t drift) in cycled two-bit per cell silicon-oxide-nitride-oxide-silicon memory. Room temperature V_t drift is significantly decreased by using bottom oxide (BOX) with the thickness T_BOX < 50 Å. Excellent retention properties are preserved for T_BOX up to 33 Å. The results of single-cell studies were confirmed on 2 Mb memory arrays that underwent up to 1000 program/ erase cycles. Peculiarities of hole injection into the nitride of oxide-nitride-oxide in the erase operation are considered for explanation of the observed results. The improvement is associated with a lesser amount of holes used in the erase.

Original language	English
Pages (from-to)	35-37
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1109/LED.2004.840711
State	Published - Jan 2005
Externally published	Yes

Keywords

NROM
Oxide-nitride-oxide (ONO)
Reliability
Silicon-oxide-nitride-oxide-silicon (SONOS) memory

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10.1109/LED.2004.840711

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title = "Suppression of erased state Vt drift in two-bit per cell SONOS memories",

abstract = "In this letter, we report on the suppression of the erased state threshold voltage drift (room temperature Vt drift) in cycled two-bit per cell silicon-oxide-nitride-oxide-silicon memory. Room temperature Vt drift is significantly decreased by using bottom oxide (BOX) with the thickness TBOX < 50 {\AA}. Excellent retention properties are preserved for TBOX up to 33 {\AA}. The results of single-cell studies were confirmed on 2 Mb memory arrays that underwent up to 1000 program/ erase cycles. Peculiarities of hole injection into the nitride of oxide-nitride-oxide in the erase operation are considered for explanation of the observed results. The improvement is associated with a lesser amount of holes used in the erase.",

keywords = "NROM, Oxide-nitride-oxide (ONO), Reliability, Silicon-oxide-nitride-oxide-silicon (SONOS) memory",

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AB - In this letter, we report on the suppression of the erased state threshold voltage drift (room temperature Vt drift) in cycled two-bit per cell silicon-oxide-nitride-oxide-silicon memory. Room temperature Vt drift is significantly decreased by using bottom oxide (BOX) with the thickness TBOX < 50 Å. Excellent retention properties are preserved for TBOX up to 33 Å. The results of single-cell studies were confirmed on 2 Mb memory arrays that underwent up to 1000 program/ erase cycles. Peculiarities of hole injection into the nitride of oxide-nitride-oxide in the erase operation are considered for explanation of the observed results. The improvement is associated with a lesser amount of holes used in the erase.

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Suppression of erased state V_t drift in two-bit per cell SONOS memories

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Keywords

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