Superior molecular beam epitaxy (MBE) growth on (N 1 1)A GaAs

Hadas Shtrikman, Y. Hanein, A. Soibel, U. Meirav

Research output: Contribution to journalConference articlepeer-review

Abstract

The (3 1 1)A and (5 1 1)A planes of GaAs were used for the growth of high-quality two-dimensional hole gas (2DHG) and electron gas (2DEG) structures, respectively. A back-gate& inverted interface, AlGaAs/GaAs structure in which a 2DHG or a 2DEG was embedded was studied. This particular structure enabled the two-dimensional carrier concentration to be varied over two orders of magnitude in a single device, as well as the measurement of extremely low carrier densities in the mid 109 cm-2 range. The remarkably low carrier concentration we were able to achieve in both a 2DHG and a 2DEG opens new frontiers for the study of mesoscopic phenomena governed by Coulomb interactions between carriers, in particular, the possible existence of a Wigner crystal.

Original languageEnglish
Pages (from-to)221-225
Number of pages5
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - May 1999
Externally publishedYes
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 31 Aug 19984 Sep 1998

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