Abstract
A new experimental technique, which utilizes a tunable laser as the illumination source for surface photovoltage spectroscopy measurements is presented. The technique determines the distribution function of gap states observed at semiconductor interfaces, makes it possible to distinguish between surface and bulk states, and to find the thermal and optical cross-sections for electrons and holes. This method may be used for both in-situ monitoring and measurements in any ambient. Moreover, it is contactless, nondestructive, and simple to apply and interpret.
| Original language | English |
|---|---|
| Pages (from-to) | 183-184 |
| Number of pages | 2 |
| Journal | Materials Science Forum |
| Volume | 173-174 |
| State | Published - 1995 |
| Event | Proceedings of the 1st International Symposium on Semiconductor Processing and Characterization with Lasers - Stuttgart, Ger Duration: 18 Apr 1994 → 20 Apr 1994 |