TY - JOUR
T1 - Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices
AU - Shappir, Assaf
AU - Shacham-Diamand, Yosi
AU - Lusky, Eli
AU - Bloom, Ilan
AU - Eitan, Boaz
PY - 2003/5
Y1 - 2003/5
N2 - An analytical model is presented for the subthreshold slope degradation of localized-charge-trapping based non-volatile memory devices. The model incorporates fringing field effects and asserts that the subthreshold slope degradation is a distinct characteristic of localized-charge-trapping. Results are compared with experimental data and two-dimensional simulations performed on an NROM™ non-volatile memory cell. These substantiate that generation of interface states is not the primary cause of the discussed phenomenon and indicate that channel-hot-electron injection takes place mostly in a narrow region at the drain junction, with a ∼20 nm tail above the transistor channel. This implies that the localization concept does not impair the scalability of NROM™, two physical bits per cell, technology.
AB - An analytical model is presented for the subthreshold slope degradation of localized-charge-trapping based non-volatile memory devices. The model incorporates fringing field effects and asserts that the subthreshold slope degradation is a distinct characteristic of localized-charge-trapping. Results are compared with experimental data and two-dimensional simulations performed on an NROM™ non-volatile memory cell. These substantiate that generation of interface states is not the primary cause of the discussed phenomenon and indicate that channel-hot-electron injection takes place mostly in a narrow region at the drain junction, with a ∼20 nm tail above the transistor channel. This implies that the localization concept does not impair the scalability of NROM™, two physical bits per cell, technology.
KW - Charge-sharing
KW - Localized trapped charge
KW - NROM™
KW - Subthreshold
UR - http://www.scopus.com/inward/record.url?scp=0037408487&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(02)00454-9
DO - 10.1016/S0038-1101(02)00454-9
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AN - SCOPUS:0037408487
SN - 0038-1101
VL - 47
SP - 937
EP - 941
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 5
ER -