TY - JOUR
T1 - Subthreshold slope and transconductance degradation model in cycled hot electron injection programed/hot hole erased silicon-oxide-nitride-oxide-silicon memories
AU - Daniel, Ramiz
AU - Ruzin, Arie
AU - Roizin, Yakov
AU - Shaham-Diamand, Yossi
N1 - Funding Information:
This work was supported by the MAGNET program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium “Emerging Dielectrics and Conductor Technologies.”
PY - 2008
Y1 - 2008
N2 - A physical model is presented for the subthreshold slope and transconductance degradation after program/erase cycling of silicon-oxide- nitride-oxide-silicon memory cells with thick bottom oxide, programed by hot electrons and erased by hot holes. Using a charge-pumping technique, it is shown that the generation of interface states is one of the mechanisms responsible for the degradation of the subthreshold slope and transconductance. In this article, we show the correlation between the increase in the charge pumping current and the decrease in the subthreshold slope and transconductance. Practical solutions are proposed to reduce the influence of the subthreshold slope and transconductance degradation on the overall device performance.
AB - A physical model is presented for the subthreshold slope and transconductance degradation after program/erase cycling of silicon-oxide- nitride-oxide-silicon memory cells with thick bottom oxide, programed by hot electrons and erased by hot holes. Using a charge-pumping technique, it is shown that the generation of interface states is one of the mechanisms responsible for the degradation of the subthreshold slope and transconductance. In this article, we show the correlation between the increase in the charge pumping current and the decrease in the subthreshold slope and transconductance. Practical solutions are proposed to reduce the influence of the subthreshold slope and transconductance degradation on the overall device performance.
UR - http://www.scopus.com/inward/record.url?scp=51849101982&partnerID=8YFLogxK
U2 - 10.1063/1.2963194
DO - 10.1063/1.2963194
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AN - SCOPUS:51849101982
SN - 0021-8979
VL - 104
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 5
M1 - 054502
ER -