Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

G. Rosenman, P. Urenski, A. Agronin, Y. Rosenwaks, M. Molotskii

Research output: Contribution to journalArticlepeer-review

Abstract

A high voltage atomic force microscope, that enabled direct tailoring of one- and two-dimensional ferroelectric domains with submicrometer dimensions in bulk LiNbO3 and ferroelectric crystals, was developed. A heavily boron-doped silicon cantilever with a tip having a radius of curvature not larger than 50 nm was used. Results revealed that the application of superhigh electric fields by the atomic force microscope tip lead to a polarization reversal mechanism.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number1
DOIs
StatePublished - 6 Jan 2003

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