Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

G. Rosenman; P. Urenski; A. Agronin; Y. Rosenwaks; M. Molotskii

doi:10.1063/1.1534410

Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

G. Rosenman, P. Urenski, A. Agronin, Y. Rosenwaks, M. Molotskii

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A high voltage atomic force microscope, that enabled direct tailoring of one- and two-dimensional ferroelectric domains with submicrometer dimensions in bulk LiNbO₃ and ferroelectric crystals, was developed. A heavily boron-doped silicon cantilever with a tip having a radius of curvature not larger than 50 nm was used. Results revealed that the application of superhigh electric fields by the atomic force microscope tip lead to a polarization reversal mechanism.

Original language	English
Pages (from-to)	103-105
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.1534410
State	Published - 6 Jan 2003

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10.1063/1.1534410

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AU - Molotskii, M.

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Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

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