Sub-meV photoluminescence linewidth and > 106 cm 2/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates

E. Pelucchi; N. Moret; B. Dwir; D. Y. Oberli; A. Rudra; N. Gogneau; A. Kumar; E. Kapon; E. Levy; A. Palevski

doi:10.1063/1.2195370

Sub-meV photoluminescence linewidth and > 10⁶ cm ²/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates

E. Pelucchi^*, N. Moret, B. Dwir, D. Y. Oberli, A. Rudra, N. Gogneau, A. Kumar, E. Kapon, E. Levy, A. Palevski

^*Corresponding author for this work

School of Physics and Astronomy

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32 Scopus citations

Abstract

We report sub-meV (as low as 0.6 meV) low-temperature photoluminescence linewidth and high low-temperature electron mobility (μ∼1-1.5× 10⁶ cm²/Vs) of GaAs quantum wells in AlGaAs barriers grown by standard metalorganic vapor phase epitaxy. These records values are achieved by epitaxial growth on (100) slightly misoriented substrates [≤0.6 degrees off-(100) GaAs substrates] in combination with a high V/III ratio for AlGaAs growth. Such small misorientations are sufficient to drastically modify the optical and transport properties as well as the growth mode and surface morphologies of both GaAs and AlGaAs epitaxial layers, allowing greater interface quality and reduced impurity incorporation. The quantum wells so obtained show optical properties comparable to high-quality samples grown by molecular beam epitaxy. In addition, the slight misorientation considerably reduces the impact of substrate temperature on electron mobility, which allows achieving high values of μ within a much broader range of growth temperatures.

Original language	English
Article number	093515
Journal	Journal of Applied Physics
Volume	99
Issue number	9
DOIs	https://doi.org/10.1063/1.2195370
State	Published - 1 May 2006

Funding

Funders	Funder number
European Science Foundation
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Sixth Framework Programme

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Pelucchi, E., Moret, N., Dwir, B., Oberli, D. Y., Rudra, A., Gogneau, N., Kumar, A., Kapon, E., Levy, E., & Palevski, A. (2006). Sub-meV photoluminescence linewidth and > 10⁶ cm ²/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates. Journal of Applied Physics, 99(9), Article 093515. https://doi.org/10.1063/1.2195370

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title = "Sub-meV photoluminescence linewidth and > 106 cm 2/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates",

abstract = "We report sub-meV (as low as 0.6 meV) low-temperature photoluminescence linewidth and high low-temperature electron mobility (μ∼1-1.5× 106 cm2/Vs) of GaAs quantum wells in AlGaAs barriers grown by standard metalorganic vapor phase epitaxy. These records values are achieved by epitaxial growth on (100) slightly misoriented substrates [≤0.6 degrees off-(100) GaAs substrates] in combination with a high V/III ratio for AlGaAs growth. Such small misorientations are sufficient to drastically modify the optical and transport properties as well as the growth mode and surface morphologies of both GaAs and AlGaAs epitaxial layers, allowing greater interface quality and reduced impurity incorporation. The quantum wells so obtained show optical properties comparable to high-quality samples grown by molecular beam epitaxy. In addition, the slight misorientation considerably reduces the impact of substrate temperature on electron mobility, which allows achieving high values of μ within a much broader range of growth temperatures.",

author = "E. Pelucchi and N. Moret and B. Dwir and Oberli, {D. Y.} and A. Rudra and N. Gogneau and A. Kumar and E. Kapon and E. Levy and A. Palevski",

note = "Funding Information: We would like to acknowledge the contribution of S. W{\"u}thrich to the photoluminescence data acquisition. The technical assistance of M. Karpovski, V. Shelukhin, I. Sternfeld, and M. Eshkol, is also greatly acknowledged. This work, as part of the European Science Foundation EUROCORES Programme SONS, was supported by funds from the Swiss National Science Foundation and the EC Sixth Framework Programme.",

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Pelucchi, E, Moret, N, Dwir, B, Oberli, DY, Rudra, A, Gogneau, N, Kumar, A, Kapon, E, Levy, E & Palevski, A 2006, 'Sub-meV photoluminescence linewidth and > 10⁶ cm ²/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates', Journal of Applied Physics, vol. 99, no. 9, 093515. https://doi.org/10.1063/1.2195370

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T1 - Sub-meV photoluminescence linewidth and > 106 cm 2/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates

AU - Pelucchi, E.

AU - Moret, N.

AU - Dwir, B.

AU - Oberli, D. Y.

AU - Rudra, A.

AU - Gogneau, N.

AU - Kumar, A.

AU - Kapon, E.

AU - Levy, E.

AU - Palevski, A.

N1 - Funding Information: We would like to acknowledge the contribution of S. Wüthrich to the photoluminescence data acquisition. The technical assistance of M. Karpovski, V. Shelukhin, I. Sternfeld, and M. Eshkol, is also greatly acknowledged. This work, as part of the European Science Foundation EUROCORES Programme SONS, was supported by funds from the Swiss National Science Foundation and the EC Sixth Framework Programme.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - We report sub-meV (as low as 0.6 meV) low-temperature photoluminescence linewidth and high low-temperature electron mobility (μ∼1-1.5× 106 cm2/Vs) of GaAs quantum wells in AlGaAs barriers grown by standard metalorganic vapor phase epitaxy. These records values are achieved by epitaxial growth on (100) slightly misoriented substrates [≤0.6 degrees off-(100) GaAs substrates] in combination with a high V/III ratio for AlGaAs growth. Such small misorientations are sufficient to drastically modify the optical and transport properties as well as the growth mode and surface morphologies of both GaAs and AlGaAs epitaxial layers, allowing greater interface quality and reduced impurity incorporation. The quantum wells so obtained show optical properties comparable to high-quality samples grown by molecular beam epitaxy. In addition, the slight misorientation considerably reduces the impact of substrate temperature on electron mobility, which allows achieving high values of μ within a much broader range of growth temperatures.

AB - We report sub-meV (as low as 0.6 meV) low-temperature photoluminescence linewidth and high low-temperature electron mobility (μ∼1-1.5× 106 cm2/Vs) of GaAs quantum wells in AlGaAs barriers grown by standard metalorganic vapor phase epitaxy. These records values are achieved by epitaxial growth on (100) slightly misoriented substrates [≤0.6 degrees off-(100) GaAs substrates] in combination with a high V/III ratio for AlGaAs growth. Such small misorientations are sufficient to drastically modify the optical and transport properties as well as the growth mode and surface morphologies of both GaAs and AlGaAs epitaxial layers, allowing greater interface quality and reduced impurity incorporation. The quantum wells so obtained show optical properties comparable to high-quality samples grown by molecular beam epitaxy. In addition, the slight misorientation considerably reduces the impact of substrate temperature on electron mobility, which allows achieving high values of μ within a much broader range of growth temperatures.

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Sub-meV photoluminescence linewidth and > 10⁶ cm ²/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates

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