Sub-half micron electroless Cu metallization

V. M. Dubin*, Y. Shacham-Diamand, B. Zhao, P. K. Vasudev, C. H. Ting

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Electroless Cu metallization has been fabricated by blanket electroless Cu deposition into the trenches in SiO2 dilectric layer on sputtered Cu seed layer with Ta diffusion layer and Al protection layer. Chemical-mechanical polishing of copper has been used to planarize the structure. Selective electroless CoWP layer has been deposited to protect inlaid Cu metallization.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996


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