Electroless Cu metallization has been fabricated by blanket electroless Cu deposition into the trenches in SiO2 dilectric layer on sputtered Cu seed layer with Ta diffusion layer and Al protection layer. Chemical-mechanical polishing of copper has been used to planarize the structure. Selective electroless CoWP layer has been deposited to protect inlaid Cu metallization.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1996|
|Event||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
Duration: 8 Apr 1996 → 11 Apr 1996