Sub-μm semiconductor device structures in CuInSe2

S. Richter, V. Lyakhovitskaya, S. R. Cohen, K. Gartsman, D. Cahen, Y. Manassen

Research output: Contribution to journalConference articlepeer-review

Abstract

We fabricate sub-micron sized diode and transistor structures (down to 100 nm in diameter) inside CuInSe2 crystals by inducing thermally assisted electromigration of mobile dopants. This is achieved by applying an elec. field via a small area contact to the crystals, using a conducting At. Force Microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles, that result from the elec. field action. Calculations suggest that the smallest of the structures that we made are very close to the lower size limit of possible p/n/p devices.
Original languageAmerican English
Pages (from-to)943-946
Number of pages4
JournalInstitute of Physics Conference Series
Volume152
StatePublished - 1998
Externally publishedYes

Keywords

  • copper indium selenide diode transistor nanostructure
  • doping copper indium selenide nanostructure

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