Study of the changes in the infrared transmission of SiO2 spin-on-glass due to ion implantation

Y. Shacham-Diamand; E. Finkman; Y. Pinkas; N. Moriya

doi:10.1063/1.105809

Study of the changes in the infrared transmission of SiO₂ spin-on-glass due to ion implantation

Y. Shacham-Diamand^*, E. Finkman, Y. Pinkas, N. Moriya

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The ion implantation of phosphorus into spin-on-glass (SOG) SiO₂ thin-film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×10¹⁴-1×10¹⁵ cm^-2 range and an energy of 40 keV. The Fourier-transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH₃ groups while the location of the Si-O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion-implanted dose is presented.

Original language	English
Pages (from-to)	2953-2955
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	23
DOIs	https://doi.org/10.1063/1.105809
State	Published - 1991
Externally published	Yes

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title = "Study of the changes in the infrared transmission of SiO2 spin-on-glass due to ion implantation",

abstract = "The ion implantation of phosphorus into spin-on-glass (SOG) SiO2 thin-film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×1014-1×1015 cm-2 range and an energy of 40 keV. The Fourier-transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH3 groups while the location of the Si-O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion-implanted dose is presented.",

author = "Y. Shacham-Diamand and E. Finkman and Y. Pinkas and N. Moriya",

year = "1991",

doi = "10.1063/1.105809",

language = "אנגלית",

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publisher = "American Institute of Physics",

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T1 - Study of the changes in the infrared transmission of SiO2 spin-on-glass due to ion implantation

AU - Shacham-Diamand, Y.

AU - Finkman, E.

AU - Pinkas, Y.

AU - Moriya, N.

PY - 1991

Y1 - 1991

N2 - The ion implantation of phosphorus into spin-on-glass (SOG) SiO2 thin-film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×1014-1×1015 cm-2 range and an energy of 40 keV. The Fourier-transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH3 groups while the location of the Si-O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion-implanted dose is presented.

AB - The ion implantation of phosphorus into spin-on-glass (SOG) SiO2 thin-film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×1014-1×1015 cm-2 range and an energy of 40 keV. The Fourier-transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH3 groups while the location of the Si-O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion-implanted dose is presented.

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Study of the changes in the infrared transmission of SiO₂ spin-on-glass due to ion implantation

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