TY - JOUR
T1 - Study of lithium diffusion into silicon-germanium crystals
AU - Ruzin, Arie
AU - Abrosimov, Nikolai
AU - Litovchenko, Piotr
PY - 2010/5/11
Y1 - 2010/5/11
N2 - In this study lithium atoms were diffused into single crystal, Czochralski grown silicon-germanium. It is shown that the diffusion coefficient has a considerable dependence on germanium concentration. In addition the surface concentration of lithium in silicon-germanium is significantly higher than the values reported for float zone grown pure silicon crystals. The study compares direct and indirect characterization methods used to determine the lithium profile in silicon-germanium. The Si1-xGex semiconductors used in this study contain 2.6% and 5.4% (atomic concentration) of germanium and have measured resistivities of 100-200 Ω cm.
AB - In this study lithium atoms were diffused into single crystal, Czochralski grown silicon-germanium. It is shown that the diffusion coefficient has a considerable dependence on germanium concentration. In addition the surface concentration of lithium in silicon-germanium is significantly higher than the values reported for float zone grown pure silicon crystals. The study compares direct and indirect characterization methods used to determine the lithium profile in silicon-germanium. The Si1-xGex semiconductors used in this study contain 2.6% and 5.4% (atomic concentration) of germanium and have measured resistivities of 100-200 Ω cm.
KW - Detectors
KW - Lithium diffusion
KW - SiGe
KW - Silicon-germanium
KW - X-ray
UR - http://www.scopus.com/inward/record.url?scp=79960226659&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2009.10.026
DO - 10.1016/j.nima.2009.10.026
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AN - SCOPUS:79960226659
SN - 0168-9002
VL - 617
SP - 588
EP - 590
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-3
ER -