@inproceedings{064c45d5bc36498b8846715edb267e69,
title = "Study of lithium diffusion into silicon-germanium crystals",
abstract = "In this study lithium atoms were difhsed into single crystal, Czochralski grown silicon-germanium. It is shown that the diffusion coefficient has a considerable dependence on germanium concentration. In addition the surface concentration of lithium in silicon germanium is significantly higher than the values reported for float zone grown pure silicon crystals. The study compares direct and indirect characterization methods used to determine the lithium profile in silicon germanium. The Si1-xGex semiconductors used in this study contain 2.6% and 5.4% (atomic concentration) of germanium and have measured resistivities of 100-200 Ωxcm.",
author = "Arie Ruzin and Nikolai Abrosimov and Piotr Litovchenko",
year = "2008",
doi = "10.1142/9789812819093_0102",
language = "אנגלית",
isbn = "9812819088",
series = "Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications - Proceedings of the 10th Conference",
publisher = "World Scientific Publishing Co. Pte Ltd",
pages = "591--597",
booktitle = "Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications - Proceedings of the 10th Conference",
address = "סינגפור",
note = "null ; Conference date: 08-10-2007 Through 12-10-2007",
}