Study of lithium diffusion into silicon-germanium crystals

Arie Ruzin, Nikolai Abrosimov, Piotr Litovchenko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study lithium atoms were difhsed into single crystal, Czochralski grown silicon-germanium. It is shown that the diffusion coefficient has a considerable dependence on germanium concentration. In addition the surface concentration of lithium in silicon germanium is significantly higher than the values reported for float zone grown pure silicon crystals. The study compares direct and indirect characterization methods used to determine the lithium profile in silicon germanium. The Si1-xGex semiconductors used in this study contain 2.6% and 5.4% (atomic concentration) of germanium and have measured resistivities of 100-200 Ωxcm.

Original languageEnglish
Title of host publicationAstroparticle, Particle and Space Physics, Detectors and Medical Physics Applications - Proceedings of the 10th Conference
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages591-597
Number of pages7
ISBN (Print)9812819088, 9789812819086
DOIs
StatePublished - 2008
EventInternational Conference on Advanced Technology and Particle Physics, ICATPP 2007 - Como, Italy
Duration: 8 Oct 200712 Oct 2007

Publication series

NameAstroparticle, Particle and Space Physics, Detectors and Medical Physics Applications - Proceedings of the 10th Conference

Conference

ConferenceInternational Conference on Advanced Technology and Particle Physics, ICATPP 2007
Country/TerritoryItaly
CityComo
Period8/10/0712/10/07

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