Study of leakage-induced photon emission processes in sub-90 nm CMOS devices

Y. Weizman*, M. Gurfinkel, A. Margulis, Y. Fefer, Y. Shapira, E. Baruch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Sub-90 nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.

Original languageEnglish
Pages (from-to)920-923
Number of pages4
JournalSolid-State Electronics
Volume50
Issue number6
DOIs
StatePublished - Jun 2006

Keywords

  • Hot carrier luminescence
  • Leakage current
  • MOSFET
  • Photon emission
  • Sub-threshold current
  • Substrate current

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