Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs

Measurements of photon emission and substrate current in metal-oxide-semiconductor field effect transistors at various temperatures have been carried out using electrical and NIR microscopy. The results received at room temperature have extended the correlation between the substrate current and the photon emission, which was previously found in the visible, to the NIR range. On the basis of this correlation, an empirical model based on the substrate current was used to describe the static emission intensity dependence on the transistor bias. Temperature resolved measurements show that the correlation between emission intensity and the substrate current appears to be coincidental.