Study of high conductivity binary Ag-W layers for application in multilevel interconnection

E. Ginsburg, A. Inberg, Y. Shacham-Diamand, A. Seidman, N. Croitoru

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper are presented the results of the study of Ag-W thin films deposited by ion beam sputtering (IBS) and electroless (El) technology on SiO2/Si substrates for MOS (Ag-W/SiO2/Si) capacitors. This is the first application of the Ag-W films for metallization and interconnects in microelectronics. From the C-V characteristics of capacitors, measured as deposited and annealed at temperatures up to 475°C, has resulted that Ag-W films may maintain normal C-V shape and low failures (less that 30%) for annealing at T<400°C. The capacitors exhibited almost ideal C-V high frequency characteristics and flat band voltage near to zero. Using the Zerbst model and C-t characteristics of capacitors were obtained the values of lifetime (τ) and velocity of recombination (s). The generation lifetime and the recombination surface velocity were of the same order of those for similar structures with Cu, Co and Al metallization. Those results indicate that Ag-W layers are MOS technology compatible and can be used in microelectronics as a new interconnect and metallization material.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages419-422
Number of pages4
ISBN (Electronic)0780365208, 9780780365209
DOIs
StatePublished - 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 22 Oct 200125 Oct 2001

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume1

Conference

Conference6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/TerritoryChina
CityShanghai
Period22/10/0125/10/01

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