TY - GEN
T1 - Study of high conductivity binary Ag-W layers for application in multilevel interconnection
AU - Ginsburg, E.
AU - Inberg, A.
AU - Shacham-Diamand, Y.
AU - Seidman, A.
AU - Croitoru, N.
N1 - Publisher Copyright:
© 2001 IEEE.
PY - 2001
Y1 - 2001
N2 - In this paper are presented the results of the study of Ag-W thin films deposited by ion beam sputtering (IBS) and electroless (El) technology on SiO2/Si substrates for MOS (Ag-W/SiO2/Si) capacitors. This is the first application of the Ag-W films for metallization and interconnects in microelectronics. From the C-V characteristics of capacitors, measured as deposited and annealed at temperatures up to 475°C, has resulted that Ag-W films may maintain normal C-V shape and low failures (less that 30%) for annealing at T<400°C. The capacitors exhibited almost ideal C-V high frequency characteristics and flat band voltage near to zero. Using the Zerbst model and C-t characteristics of capacitors were obtained the values of lifetime (τ) and velocity of recombination (s). The generation lifetime and the recombination surface velocity were of the same order of those for similar structures with Cu, Co and Al metallization. Those results indicate that Ag-W layers are MOS technology compatible and can be used in microelectronics as a new interconnect and metallization material.
AB - In this paper are presented the results of the study of Ag-W thin films deposited by ion beam sputtering (IBS) and electroless (El) technology on SiO2/Si substrates for MOS (Ag-W/SiO2/Si) capacitors. This is the first application of the Ag-W films for metallization and interconnects in microelectronics. From the C-V characteristics of capacitors, measured as deposited and annealed at temperatures up to 475°C, has resulted that Ag-W films may maintain normal C-V shape and low failures (less that 30%) for annealing at T<400°C. The capacitors exhibited almost ideal C-V high frequency characteristics and flat band voltage near to zero. Using the Zerbst model and C-t characteristics of capacitors were obtained the values of lifetime (τ) and velocity of recombination (s). The generation lifetime and the recombination surface velocity were of the same order of those for similar structures with Cu, Co and Al metallization. Those results indicate that Ag-W layers are MOS technology compatible and can be used in microelectronics as a new interconnect and metallization material.
UR - http://www.scopus.com/inward/record.url?scp=84966479800&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2001.981508
DO - 10.1109/ICSICT.2001.981508
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AN - SCOPUS:84966479800
T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
SP - 419
EP - 422
BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
A2 - Iwai, Hiroshi
A2 - Yu, Paul
A2 - Li, Bing-Zong
A2 - Ru, Guo-Ping
A2 - Qu, Xin-Ping
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Y2 - 22 October 2001 through 25 October 2001
ER -