Study of bulk grown silicon-germanium radiation detectors

A. Ruzin; S. Marunko; Y. Gusakov

doi:10.1063/1.1688462

Study of bulk grown silicon-germanium radiation detectors

A. Ruzin^*
, S. Marunko
, Y. Gusakov

^*Corresponding author for this work

Engineering General

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The results of p⁺-i-n⁺-like (PIN) devices fabricated with a single crystal, Czochralski grown silicon germanium were demonstrated. It was shown that the material has a high potential for X-ray detector applications. The device were characterized under dark conditions as well as under infrared laser illumination and gamma-ray photons. The device show diode behavior with frequency and temperature independent capacitance-voltage characteristics. It was shown that the lattice constant of the compound bulk semiconductor was expected to vary linearly according to Vegard's rule from the 2.54 Å in Si to 5.6575 Å in Ge.

Original language	English
Pages (from-to)	5081-5087
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.1688462
State	Published - 1 May 2004

Access to Document

10.1063/1.1688462

Cite this

@article{2d25bafa43054eb5903f779f5af59488,

title = "Study of bulk grown silicon-germanium radiation detectors",

abstract = "The results of p+-i-n+-like (PIN) devices fabricated with a single crystal, Czochralski grown silicon germanium were demonstrated. It was shown that the material has a high potential for X-ray detector applications. The device were characterized under dark conditions as well as under infrared laser illumination and gamma-ray photons. The device show diode behavior with frequency and temperature independent capacitance-voltage characteristics. It was shown that the lattice constant of the compound bulk semiconductor was expected to vary linearly according to Vegard's rule from the 2.54 {\AA} in Si to 5.6575 {\AA} in Ge.",

author = "A. Ruzin and S. Marunko and Y. Gusakov",

year = "2004",

month = may,

day = "1",

doi = "10.1063/1.1688462",

language = "אנגלית",

volume = "95",

pages = "5081--5087",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Study of bulk grown silicon-germanium radiation detectors

AU - Ruzin, A.

AU - Marunko, S.

AU - Gusakov, Y.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The results of p+-i-n+-like (PIN) devices fabricated with a single crystal, Czochralski grown silicon germanium were demonstrated. It was shown that the material has a high potential for X-ray detector applications. The device were characterized under dark conditions as well as under infrared laser illumination and gamma-ray photons. The device show diode behavior with frequency and temperature independent capacitance-voltage characteristics. It was shown that the lattice constant of the compound bulk semiconductor was expected to vary linearly according to Vegard's rule from the 2.54 Å in Si to 5.6575 Å in Ge.

AB - The results of p+-i-n+-like (PIN) devices fabricated with a single crystal, Czochralski grown silicon germanium were demonstrated. It was shown that the material has a high potential for X-ray detector applications. The device were characterized under dark conditions as well as under infrared laser illumination and gamma-ray photons. The device show diode behavior with frequency and temperature independent capacitance-voltage characteristics. It was shown that the lattice constant of the compound bulk semiconductor was expected to vary linearly according to Vegard's rule from the 2.54 Å in Si to 5.6575 Å in Ge.

UR - https://www.scopus.com/pages/publications/2442519298

U2 - 10.1063/1.1688462

DO - 10.1063/1.1688462

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:2442519298

SN - 0021-8979

VL - 95

SP - 5081

EP - 5087

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Study of bulk grown silicon-germanium radiation detectors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this