The results of p+-i-n+-like (PIN) devices fabricated with a single crystal, Czochralski grown silicon germanium were demonstrated. It was shown that the material has a high potential for X-ray detector applications. The device were characterized under dark conditions as well as under infrared laser illumination and gamma-ray photons. The device show diode behavior with frequency and temperature independent capacitance-voltage characteristics. It was shown that the lattice constant of the compound bulk semiconductor was expected to vary linearly according to Vegard's rule from the 2.54 Å in Si to 5.6575 Å in Ge.