Study of bulk grown silicon-germanium radiation detectors

A. Ruzin*, S. Marunko, Y. Gusakov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The results of p+-i-n+-like (PIN) devices fabricated with a single crystal, Czochralski grown silicon germanium were demonstrated. It was shown that the material has a high potential for X-ray detector applications. The device were characterized under dark conditions as well as under infrared laser illumination and gamma-ray photons. The device show diode behavior with frequency and temperature independent capacitance-voltage characteristics. It was shown that the lattice constant of the compound bulk semiconductor was expected to vary linearly according to Vegard's rule from the 2.54 Å in Si to 5.6575 Å in Ge.

Original languageEnglish
Pages (from-to)5081-5087
Number of pages7
JournalJournal of Applied Physics
Issue number9
StatePublished - 1 May 2004


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