Detectors for high-energy particles sustain a substantial amount of structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long `lifetime' detectors are required. This work reports about radiation hardness of silicon P-I-N devices fabricated from oxygen enriched high resistivity material. The high and nearly uniform concentration of oxygen in Float Zone silicon has been achieved by diffusion of oxygen from SiO2 layers.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|State||Published - 21 Apr 1999|
|Event||Proceedings of the 1998 2nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - Firenze, Italy|
Duration: 4 Mar 1998 → 6 Mar 1998