Studies of radiation hardness of oxygen enriched silicon detectors

A. Ruzin, G. Casse, M. Glaser, F. Lemeilleur

Research output: Contribution to journalConference articlepeer-review

Abstract

Detectors for high-energy particles sustain a substantial amount of structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long `lifetime' detectors are required. This work reports about radiation hardness of silicon P-I-N devices fabricated from oxygen enriched high resistivity material. The high and nearly uniform concentration of oxygen in Float Zone silicon has been achieved by diffusion of oxygen from SiO2 layers.

Original languageEnglish
Pages (from-to)94-98
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume426
Issue number1
DOIs
StatePublished - 21 Apr 1999
Externally publishedYes
EventProceedings of the 1998 2nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - Firenze, Italy
Duration: 4 Mar 19986 Mar 1998

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