Studies of formation of thin metal films on III-V compound semiconductors

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Abstract

Metal film formation on the III-V compound semiconductors InP, GaAs and InSb has been studied using synchroton-radiation photoelectron spectroscopy, polar-angle-resolved X-ray photoemission spectroscopy, Auger electron spectroscopy, surface photovoltage spectroscopy, and electrical measurements. The metal overlayers deposited in situ on UHV -cleaved (110) surfaces are found to be highly heterogeneous with non-abrupt interfaces, as a result of disruption of the original surface, atom intermixing and reaction in some systems, as well as significant anion and cation solution and surface segregation. Although InP, GaAs and InSb show similar behavior, significant differences are observed because the anion-cation bond strength determines the extent of the surface disruption and semiconductor atom solid solubilities in the metal overlayer dominate the segregation patterns in each system. The deposition technique, the degree of reactivity of the metal with the semiconductor constituents, surface disruption, segregation, island formation and interfacial kinetics all play a role in determining the structure and composition of the various interfaces.

Original languageEnglish
Pages (from-to)141-148
Number of pages8
JournalThin Solid Films
Volume175
Issue numberC
DOIs
StatePublished - Aug 1989

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