TY - JOUR
T1 - Studies of C60 thin films using surface photovoltage spectroscopy
AU - Mishori, B.
AU - Shapira, Yoram
AU - Belu-Marian, A.
AU - Manciu, M.
AU - Devenyi, A.
PY - 1997/1/3
Y1 - 1997/1/3
N2 - The electronic structure of polycrystalline C60 thin films has been investigated using surface photovoltage spectroscopy (SPS) and conductivity measurements. The films show n-type semiconductivity with an activation energy of ≈ 0.8 eV as found from the temperature dependence of the conductivity at high temperatures. The electronic structure emerging from our SPS results comprises a 1.6 eV photoconduction gap, a mobility gap of about 2.25 eV and two gap states, a donor and an acceptor, at 0.35 and 0.8 eV, respectively, below the photoconduction edge. The proposed model positions the Fermi level between these two localised levels. Thus, the high-temperature conductivity is due to electrons excited across the photoconduction gap.
AB - The electronic structure of polycrystalline C60 thin films has been investigated using surface photovoltage spectroscopy (SPS) and conductivity measurements. The films show n-type semiconductivity with an activation energy of ≈ 0.8 eV as found from the temperature dependence of the conductivity at high temperatures. The electronic structure emerging from our SPS results comprises a 1.6 eV photoconduction gap, a mobility gap of about 2.25 eV and two gap states, a donor and an acceptor, at 0.35 and 0.8 eV, respectively, below the photoconduction edge. The proposed model positions the Fermi level between these two localised levels. Thus, the high-temperature conductivity is due to electrons excited across the photoconduction gap.
UR - http://www.scopus.com/inward/record.url?scp=0031550143&partnerID=8YFLogxK
U2 - 10.1016/S0009-2614(96)01292-4
DO - 10.1016/S0009-2614(96)01292-4
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AN - SCOPUS:0031550143
SN - 0009-2614
VL - 264
SP - 163
EP - 167
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-2
ER -