Studies of C60 thin films using surface photovoltage spectroscopy

B. Mishori*, Yoram Shapira, A. Belu-Marian, M. Manciu, A. Devenyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The electronic structure of polycrystalline C60 thin films has been investigated using surface photovoltage spectroscopy (SPS) and conductivity measurements. The films show n-type semiconductivity with an activation energy of ≈ 0.8 eV as found from the temperature dependence of the conductivity at high temperatures. The electronic structure emerging from our SPS results comprises a 1.6 eV photoconduction gap, a mobility gap of about 2.25 eV and two gap states, a donor and an acceptor, at 0.35 and 0.8 eV, respectively, below the photoconduction edge. The proposed model positions the Fermi level between these two localised levels. Thus, the high-temperature conductivity is due to electrons excited across the photoconduction gap.

Original languageEnglish
Pages (from-to)163-167
Number of pages5
JournalChemical Physics Letters
Issue number1-2
StatePublished - 3 Jan 1997


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