TY - JOUR
T1 - Structural and electronic properties of optimized a-Si:H films
AU - Lubianiker, Yoram
AU - Cohen, J. David
AU - Lubarsky, G.
AU - Rosenwaks, Y.
AU - Yang, Jeffrey
AU - Guha, Subhendu
N1 - Funding Information:
The authors are indebted to Don Williamson for many helpful discussions. The work at Oregon and at United Solar was supported by the National Renewable Energy Laboratory under Contract Nos. XAF-8-17619-05 and ZAK-8-17619-09, respectively. The research in TAU was supported by the Israel Science Foundation administered by the Israel Academy of Sciences and Humanities-Recanati and IDB group foundation, and by grant 9701 of the Israel Ministry of Sciences.
PY - 2000/5/1
Y1 - 2000/5/1
N2 - Intrinsic a-Si:H films grown using optimized larger hydrogen dilution conditions have been studied. Capacitance measurements show a decrease in defect density with increasing film thickness. For films with thickness of 1.3 μm transient photocapacitance data indicate electronic transitions due to microcrystallites embedded in an amorphous matrix. Atomic force microscopy measurements enable us to identify crystallites at the film surface, while Kelvin probe force microscopy is used to measure their electronic properties. The correlation between the structural and electronic properties is discussed.
AB - Intrinsic a-Si:H films grown using optimized larger hydrogen dilution conditions have been studied. Capacitance measurements show a decrease in defect density with increasing film thickness. For films with thickness of 1.3 μm transient photocapacitance data indicate electronic transitions due to microcrystallites embedded in an amorphous matrix. Atomic force microscopy measurements enable us to identify crystallites at the film surface, while Kelvin probe force microscopy is used to measure their electronic properties. The correlation between the structural and electronic properties is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0002426423&partnerID=8YFLogxK
U2 - 10.1016/s0022-3093(99)00830-3
DO - 10.1016/s0022-3093(99)00830-3
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AN - SCOPUS:0002426423
SN - 0022-3093
VL - 266-269 A
SP - 253
EP - 257
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)
Y2 - 23 August 1999 through 27 August 1999
ER -