Stress distribution profile imaging with spectral Fabry-Perot interferometry in thin layer substrates for surface micromachining

Adam Inzelberg, Yoav Linzon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have used spectral two-layer interferometry (STLI) imaging for estimation of the stress distribution profiles (SDPs) in thin film substrates, enabling fast and reliable all-optical methodology for the evaluation of pre-stress topography profiles in silicon wafers deposited with thin films. Specifically, in polycrystalline silicon (PS) and silicon nitride (SN) thin films, we demonstrate a nondestructive, systematic, and robust capability for consistent stress distribution profile (SDP) evaluation relying on STLI. In particular, for PS and SN devices, the SDP estimation is consistent and is compared with complementary characterization of the films.

Original languageEnglish
Article number294
JournalMicromachines
Volume8
Issue number10
DOIs
StatePublished - 30 Sep 2017

Funding

FundersFunder number
Israel Ministry of Science and Technology3-12947

    Keywords

    • Interference spectroscopy
    • Local stress evaluation
    • Optomechanics
    • Thin films

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