Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Artur Tuktamyshev; Stefano Vichi; Federico Guido Cesura; Alexey Fedorov; Giuseppe Carminati; Davide Lambardi; Jacopo Pedrini; Elisa Vitiello; Fabio Pezzoli; Sergio Bietti; Stefano Sanguinetti

doi:10.3390/nano12203571

Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura^*, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, Stefano Sanguinetti

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Original language	English
Article number	3571
Journal	Nanomaterials
Volume	12
Issue number	20
DOIs	https://doi.org/10.3390/nano12203571
State	Published - Oct 2022
Externally published	Yes

Keywords

III–V semiconductors
droplet epitaxy
metamorphic buffer layer
quantum dot
strain relaxation

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10.3390/nano12203571

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title = "Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates",

abstract = "We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.",

keywords = "III–V semiconductors, droplet epitaxy, metamorphic buffer layer, quantum dot, strain relaxation",

author = "Artur Tuktamyshev and Stefano Vichi and Cesura, {Federico Guido} and Alexey Fedorov and Giuseppe Carminati and Davide Lambardi and Jacopo Pedrini and Elisa Vitiello and Fabio Pezzoli and Sergio Bietti and Stefano Sanguinetti",

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month = oct,

doi = "10.3390/nano12203571",

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volume = "12",

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AU - Tuktamyshev, Artur

AU - Vichi, Stefano

AU - Cesura, Federico Guido

AU - Fedorov, Alexey

AU - Carminati, Giuseppe

AU - Lambardi, Davide

AU - Pedrini, Jacopo

AU - Vitiello, Elisa

AU - Pezzoli, Fabio

AU - Bietti, Sergio

AU - Sanguinetti, Stefano

PY - 2022/10

Y1 - 2022/10

N2 - We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

AB - We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

KW - III–V semiconductors

KW - droplet epitaxy

KW - metamorphic buffer layer

KW - quantum dot

KW - strain relaxation

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Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

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