Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura*, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, Stefano Sanguinetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Original languageEnglish
Article number3571
Issue number20
StatePublished - Oct 2022
Externally publishedYes


  • III–V semiconductors
  • droplet epitaxy
  • metamorphic buffer layer
  • quantum dot
  • strain relaxation


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