Abstract
For devices employing active Ga0 .52 In0.48P layers, appropriate high band gap barrier materials are required for carrier confinement or injection .
Lattice matched and mismatched ( AI,Ga,In - As, P ) binary, ternary, and quartenary materials were deposited epitaxially by atmospheric pressure organometallic vapor phase epitaxy on top of p -Ga0 .52In0.48P . The influence of 50 - 1004 heteroepitaxial surface layers on the optical properties of the active Ga0.52 In0.48P was evaluated by steady - state and time-resolved photoluminescence. Transmission electron microscopy was also used to investigate the onset of dislocations for the strained heterolayers. Results indicate that all the surface layers, except those of the lattice matched [ AlxGa( 1-x )]0. 52In0.48P , were poor optical passivators of the Ga0.52 In0.48P in terms of total luminescence efficiency and minority carrier lifetime. We interpret these results in terms of theoretical analysis of the solid state band diagrams that predicts staggered band lineups at the strained heterojunctions.
Lattice matched and mismatched ( AI,Ga,In - As, P ) binary, ternary, and quartenary materials were deposited epitaxially by atmospheric pressure organometallic vapor phase epitaxy on top of p -Ga0 .52In0.48P . The influence of 50 - 1004 heteroepitaxial surface layers on the optical properties of the active Ga0.52 In0.48P was evaluated by steady - state and time-resolved photoluminescence. Transmission electron microscopy was also used to investigate the onset of dislocations for the strained heterolayers. Results indicate that all the surface layers, except those of the lattice matched [ AlxGa( 1-x )]0. 52In0.48P , were poor optical passivators of the Ga0.52 In0.48P in terms of total luminescence efficiency and minority carrier lifetime. We interpret these results in terms of theoretical analysis of the solid state band diagrams that predicts staggered band lineups at the strained heterojunctions.
| Original language | American English |
|---|---|
| Title of host publication | PROCEEDINGS OF THE SYMPOSIUM ON WIDE BANDGAP SEMICONDUCTORS AND DEVICES |
| Subtitle of host publication | AND THE TWENTY-THIRD STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIII) |
| Editors | F. Ren, D.N. Buckley, S.J. Pearton, P. Van Daele, G.C. Chi, T. Kamijoh, F. Schuermeyer |
| Place of Publication | Pennington, New Jersey |
| Publisher | The Electrochemical Society |
| Pages | 285-292 |
| Volume | 95-21 |
| ISBN (Print) | 1-56677-116-1 |
| State | Published - 1995 |
| Event | State-of-the-Art Program on Compound Semiconductors - Chicago, Illinois, United States Duration: 8 Oct 1995 → 13 Oct 1995 Conference number: 23 https://books.google.co.il/books?id=wVVeb3EMjxEC&printsec=frontcover&redir_esc=y#v=onepage&q&f=false |
Conference
| Conference | State-of-the-Art Program on Compound Semiconductors |
|---|---|
| Abbreviated title | SOTAPOCS XXIII |
| Country/Territory | United States |
| City | Chicago, Illinois |
| Period | 8/10/95 → 13/10/95 |
| Internet address |