Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

I. Shalish, Yoram Shapira

Research output: Contribution to journalArticlepeer-review

Abstract

Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.

Original languageEnglish
Pages (from-to)2477-2481
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number5
DOIs
StatePublished - Sep 2000

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