Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

I. Shalish; Yoram Shapira

doi:10.1116/1.1290368

Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

I. Shalish^*, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi₂/Ta₂₀Si₄₀N₄₀/Au metallization.

Original language	English
Pages (from-to)	2477-2481
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1290368
State	Published - Sep 2000

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title = "Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC",

abstract = "Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.",

author = "I. Shalish and Yoram Shapira",

year = "2000",

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AU - Shapira, Yoram

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N2 - Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.

AB - Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.

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ER -

Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

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