Spontaneous vortice arrays formation in broad area vertical cavity semiconductor lasers

J. Scheuer*, N. Orenstein

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The transverse intensity patterns emerging from a proton implanted, broad-area vertical cavity surface emitting lasers (VCSELs) with three 8 nm In0.2Ga0.8As wells, emitting at approximately 0.95 μm were examined. The near-field and the spectrally resolved near-field intensity patterns were studied at room temperature under continuous wave operation. The formation of the patterns was generic rather than specific because the patterns obtained were similar to those obtained for passive nonlinearity, as well as for sodium laser where the nonlinear mechanisms were substantially different.

Original languageEnglish
Pages361-363
Number of pages3
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Nonlinear Optics Topical Meeting - Princeville, HI, USA
Duration: 10 Aug 199814 Aug 1998

Conference

ConferenceProceedings of the 1998 IEEE Nonlinear Optics Topical Meeting
CityPrinceville, HI, USA
Period10/08/9814/08/98

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