The transverse intensity patterns emerging from a proton implanted, broad-area vertical cavity surface emitting lasers (VCSELs) with three 8 nm In0.2Ga0.8As wells, emitting at approximately 0.95 μm were examined. The near-field and the spectrally resolved near-field intensity patterns were studied at room temperature under continuous wave operation. The formation of the patterns was generic rather than specific because the patterns obtained were similar to those obtained for passive nonlinearity, as well as for sodium laser where the nonlinear mechanisms were substantially different.
|Number of pages
|Published - 1998
|Proceedings of the 1998 IEEE Nonlinear Optics Topical Meeting - Princeville, HI, USA
Duration: 10 Aug 1998 → 14 Aug 1998
|Proceedings of the 1998 IEEE Nonlinear Optics Topical Meeting
|Princeville, HI, USA
|10/08/98 → 14/08/98