TY - JOUR
T1 - Spin-on-glass for 200 nm trench isolation structures
AU - Lutze, Jeffrey W.
AU - Shacham-Diamand, Yosi Y.
AU - Krusius, J. Peter
PY - 1991/3
Y1 - 1991/3
N2 - Technologies for utilizing spin-on-glass (sog) in trench isolation are discussed. Two trench isolation technologies: A trench filled with sog and a polysilicon filled trench planarized by sog, are examined- We have successfully filled and planarized trenches as small as 200 nm without cracking or void formation using a polysrloxane SOG. Furnace, rapid thermal processing, and Si implant anneal technologies were all investigated, and all demonstrated useful results. An etchback process for the sog planarized, polysilicon filled trench is presented. Finally, a phenomenological model for planarizing narrow width trenches is developed.
AB - Technologies for utilizing spin-on-glass (sog) in trench isolation are discussed. Two trench isolation technologies: A trench filled with sog and a polysilicon filled trench planarized by sog, are examined- We have successfully filled and planarized trenches as small as 200 nm without cracking or void formation using a polysrloxane SOG. Furnace, rapid thermal processing, and Si implant anneal technologies were all investigated, and all demonstrated useful results. An etchback process for the sog planarized, polysilicon filled trench is presented. Finally, a phenomenological model for planarizing narrow width trenches is developed.
UR - http://www.scopus.com/inward/record.url?scp=0026123367&partnerID=8YFLogxK
U2 - 10.1088/0960-1317/1/1/009
DO - 10.1088/0960-1317/1/1/009
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AN - SCOPUS:0026123367
SN - 0960-1317
VL - 1
SP - 46
EP - 51
JO - Journal of Micromechanics and Microengineering
JF - Journal of Micromechanics and Microengineering
IS - 1
ER -