Spectroscopy of interface states of indium-Si(111)(4 × 1) and (1 × 1)R30° surfaces

Helmut Öfner, Svetlozar L. Surnev, Yoram Shapira, Falko P. Netzer*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The electronic structure of the In-Si(111)(4 × 1) and (1 × 1)R30° surfaces has been investigated by k-resolved direct and inverse UV photoemission spectroscopy. Spectral features are identified in terms of In-Si interface states, overlayer-induced image potential barrier resonances, and Si bulk states using the respective energy versus k plots; the interface states are particularly pronounced in the inverse photoemission spectra. The interface states associated with the (4 × 1) and the (1 × 1)R30° surfaces are significantly different with respect to each other and are distinguished from those at the InSi(√3 × √3)R30° reconstruction. This is taken as an indication of different local bonding geometries of In adatoms in the different ordered In-Si surfaces.

Original languageEnglish
Pages (from-to)315-320
Number of pages6
JournalSurface Science
Volume307-309
Issue numberPART A
DOIs
StatePublished - 20 Apr 1994
Externally publishedYes

Funding

FundersFunder number
Austrian Science Foundation throughg

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