Spectromicroscopy of tantalum oxide memristors

  • John Paul Strachan*
  • , Gilberto Medeiros-Ribeiro
  • , J. Joshua Yang
  • , M. X. Zhang
  • , Feng Miao
  • , Ilan Goldfarb
  • , Martin Holt
  • , Volker Rose
  • , R. Stanley Williams
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

We report experiments to measure material changes in tantalum oxide-based memristive devices. The high endurance and low power demonstrated in this material system suggests a unique mechanism for the switching, which we investigated using x-ray based spectromicroscopy and nanospectroscopy. Our study nondestructively identified a localized (<150nm diameter) Ta-rich phase surrounded by nano- or polycrystalline Ta2 O5.

Original languageEnglish
Article number242114
JournalApplied Physics Letters
Volume98
Issue number24
DOIs
StatePublished - 13 Jun 2011

Funding

FundersFunder number
U.S. Department of Energy
Office of Science
Basic Energy SciencesDE-AC02-06CH11357

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