Spectromicroscopy of tantalum oxide memristors

John Paul Strachan*, Gilberto Medeiros-Ribeiro, J. Joshua Yang, M. X. Zhang, Feng Miao, Ilan Goldfarb, Martin Holt, Volker Rose, R. Stanley Williams

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report experiments to measure material changes in tantalum oxide-based memristive devices. The high endurance and low power demonstrated in this material system suggests a unique mechanism for the switching, which we investigated using x-ray based spectromicroscopy and nanospectroscopy. Our study nondestructively identified a localized (<150nm diameter) Ta-rich phase surrounded by nano- or polycrystalline Ta2 O5.

Original languageEnglish
Article number242114
JournalApplied Physics Letters
Issue number24
StatePublished - 13 Jun 2011


FundersFunder number
U.S. Department of Energy
Office of Science
Basic Energy SciencesDE-AC02-06CH11357


    Dive into the research topics of 'Spectromicroscopy of tantalum oxide memristors'. Together they form a unique fingerprint.

    Cite this