Spatially resolved correlation of active and total doping concentrations in VLS grown nanowires

Iddo Amit, Uri Givan*, Justin G. Connell, Dennis F. Paul, John S. Hammond, Lincoln J. Lauhon, Yossi Rosenwaks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Controlling axial and radial dopant profiles in nanowires is of utmost importance for NW-based devices, as the formation of tightly controlled electrical junctions is crucial for optimization of device performance. Recently, inhomogeneous dopant profiles have been observed in vapor-liquid-solid grown nanowires, but the underlying mechanisms that produce these inhomogeneities have not been completely characterized. In this work, P-doping profiles of axially modulation-doped Si nanowires were studied using nanoprobe scanning Auger microscopy and Kelvin probe force microscopy in order to distinguish between vapor-liquid-solid doping and the vapor-solid doping. We find that both mechanisms result in radially inhomogeneous doping, specifically, a lightly doped core surrounded by a heavily doped shell structure. Careful design of dopant modulation enables the contributions of the two mechanisms to be distinguished, revealing a surprisingly strong reservoir effect that significantly broadens the axial doping junctions.

Original languageEnglish
Pages (from-to)2598-2604
Number of pages7
JournalNano Letters
Issue number6
StatePublished - 12 Jun 2013


  • Kelvin probe force microscopy
  • Nanowires
  • VLS
  • doping
  • nanoprobe scanning Auger microscopy


Dive into the research topics of 'Spatially resolved correlation of active and total doping concentrations in VLS grown nanowires'. Together they form a unique fingerprint.

Cite this