Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device

Assaf Shappir; David Levy; Gil Geva; Yosi Shacham-Diamand; Eli Lusky; Ilan Bloom; Boaz Eitan

doi:10.1109/EEEI.2002.1178321

Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device

Assaf Shappir, David Levy, Gil Geva, Yosi Shacham-Diamand, Eli Lusky, Ilan Bloom, Boaz Eitan

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Subthreshold slope degradation in the NROM™ localized-charge-trapping non-volatile memory device is utilized to investigate the spatial distributions of hot carriers injected into the gate dielectric stack. An analytical model is presented, which attributes the subthreshold slope degradation to the formation of a fringing field induced extended depletion layer. It is shown that electron and hole trapping takes place mostly in a narrow, 40-50nm wide, region near the drain junction.

Original language	English
Title of host publication	22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	58-60
Number of pages	3
ISBN (Electronic)	0780376935
DOIs	https://doi.org/10.1109/EEEI.2002.1178321
State	Published - 2002
Event	22nd Convention of Electrical and Electronics Engineers in Israel - Tel-Aviv, Israel Duration: 1 Dec 2002 → …

Publication series

Name	IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings
Volume	2002-January

Conference

Conference	22nd Convention of Electrical and Electronics Engineers in Israel
Country/Territory	Israel
City	Tel-Aviv
Period	1/12/02 → …

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10.1109/EEEI.2002.1178321

Cite this

Shappir, A., Levy, D., Geva, G., Shacham-Diamand, Y., Lusky, E., Bloom, I., & Eitan, B. (2002). Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device. In 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings (pp. 58-60). [1178321] (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EEEI.2002.1178321

Shappir, Assaf ; Levy, David ; Geva, Gil et al. / Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device. 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 58-60 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings).

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title = "Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device",

abstract = "Subthreshold slope degradation in the NROM{\texttrademark} localized-charge-trapping non-volatile memory device is utilized to investigate the spatial distributions of hot carriers injected into the gate dielectric stack. An analytical model is presented, which attributes the subthreshold slope degradation to the formation of a fringing field induced extended depletion layer. It is shown that electron and hole trapping takes place mostly in a narrow, 40-50nm wide, region near the drain junction.",

author = "Assaf Shappir and David Levy and Gil Geva and Yosi Shacham-Diamand and Eli Lusky and Ilan Bloom and Boaz Eitan",

year = "2002",

doi = "10.1109/EEEI.2002.1178321",

language = "אנגלית",

series = "IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "58--60",

booktitle = "22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings",

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Shappir, A, Levy, D, Geva, G, Shacham-Diamand, Y, Lusky, E, Bloom, I & Eitan, B 2002, Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device. in 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings., 1178321, IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 58-60, 22nd Convention of Electrical and Electronics Engineers in Israel, Tel-Aviv, Israel, 1/12/02. https://doi.org/10.1109/EEEI.2002.1178321

Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device. / Shappir, Assaf; Levy, David; Geva, Gil et al.
22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2002. p. 58-60 1178321 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Shappir A, Levy D, Geva G, Shacham-Diamand Y, Lusky E, Bloom I et al. Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device. In 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 58-60. 1178321. (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings). doi: 10.1109/EEEI.2002.1178321

Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device

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