Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Alon Ron, Amir Hevroni, Eran Maniv, Michael Mograbi, Lei Jin, Chun Lin Jia, Knut W. Urban, Gil Markovich, Yoram Dagan

Research output: Contribution to journalArticlepeer-review

Abstract

Interfaces play an important role in a variety of devices including transistors, solar cells, and memory components. Atomically sharp interfaces are essential to avoid charge traps that hamper efficient device operation. Sharp interfaces usually require thin-film fabrication techniques involving ultrahigh vacuum and high substrate temperatures. A new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors is presented. This method is fast, cheap, and yields perfect interfaces as validated by various analysis techniques. It allows the growth of heterostructures with half-unit-cell resolution. The method is demonstrated by designing a hole-type oxide interface SrTiO3/BaO/LaAlO3. It is shown that transport through this interface exhibits properties of mixed electron–hole contributions with hole mobility exceeding that of electrons.

Original languageEnglish
Article number1700688
JournalAdvanced Materials Interfaces
Volume4
Issue number22
DOIs
StatePublished - 23 Nov 2017

Keywords

  • oxide interfaces
  • self-limiting monolayer deposition
  • solution monolayer epitaxy

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