Solid-phase epitaxial regrowth of Sb-implanted Si_1-xGe _x strained layers: Kinetics and electrical properties

Keyphrases

• Electrical Properties 100%
• Solid Phase 100%
• Kinetic Properties 100%
• Epitaxial 100%
• Solid Phase Epitaxial Regrowth 100%
• Strained Layers 100%
• Si1-xGex 50%
• Si(111) 50%
• Activation Energy 50%
• Regrowth Rate 50%
• Room Temperature 25%
• High Dose 25%
• 2-dose 25%
• Annealing 25%
• Rapid Thermal Annealing 25%
• Molecular Beam Epitaxy 25%
• Epilayer 25%
• Solid Properties 25%
• Si (100) Substrate 25%
• Si1-xGex Alloy 25%
• Conventional Furnace 25%
• Backscatter Measurement 25%

Material Science

• Activation Energy 100%
• Annealing 50%
• Molecular Beam Epitaxy 50%
• Epilayers 50%