Sixteen-state magnetic memory based on the extraordinary Hall effect

A. Segal, M. Karpovski, A. Gerber*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.

Original languageEnglish
Pages (from-to)1557-1560
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number8
StatePublished - Apr 2012


  • Extraordinary Hall effect
  • Multi-bit magnetic memory


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