SiO2Si3N4Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing

M. Lisiansky, A. Heiman, M. Kovler, A. Fenigstein, Y. Roizin, I. Levin, A. Gladkikh, M. Oksman, R. Edrei, A. Hoffman, Y. Shnieder, T. Claasen

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Physics & Astronomy