Simultaneous planar growth of amorphous and crystalline Ni silicides

E. Ma; W. J. Meng; W. L. Johnson; M. A. Nicolet; M. Nathan

doi:10.1063/1.100494

Simultaneous planar growth of amorphous and crystalline Ni silicides

E. Ma^*, W. J. Meng, W. L. Johnson, M. A. Nicolet, M. Nathan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.

Original language	English
Pages (from-to)	2033-2035
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	21
DOIs	https://doi.org/10.1063/1.100494
State	Published - 1988
Externally published	Yes

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title = "Simultaneous planar growth of amorphous and crystalline Ni silicides",

abstract = "We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.",

author = "E. Ma and Meng, {W. J.} and Johnson, {W. L.} and Nicolet, {M. A.} and M. Nathan",

year = "1988",

doi = "10.1063/1.100494",

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T1 - Simultaneous planar growth of amorphous and crystalline Ni silicides

AU - Ma, E.

AU - Meng, W. J.

AU - Johnson, W. L.

AU - Nicolet, M. A.

AU - Nathan, M.

PY - 1988

Y1 - 1988

N2 - We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.

AB - We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.

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JO - Applied Physics Letters

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Simultaneous planar growth of amorphous and crystalline Ni silicides

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