SIMULATION OF STRESS EFFECTS ON REACTION KINETICS AND OXIDANT DIFFUSION IN SILICON OXIDATION.

P. Sutardja, Y. Shacham-Diamand, W. G. Oldham

Research output: Contribution to journalConference articlepeer-review

Abstract

A general two-dimensional (2-D) silicon oxidation program has been developed to investigate an oxidation model which includes stress-dependent physical parameters. A simple 2-D extension of the Deal-Grove model is inadequate, especially for high-stress processes, such as the SILO process and oxidation of stepped silicon. Inclusion of a stress-dependent surface-reaction-rate model produces accurate oxide profiles for many different oxidation processes. Inclusion of the stress effect on the oxidant diffusivity has little effect on the oxide profile unless the oxide is thick enough to be in a diffusion-limited oxidation regime.

Original languageEnglish
Pages (from-to)526-529
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1986
Externally publishedYes

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