Simulation of compensated and overcompensated Cd1-xZn xTe

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Abstract

Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.

Keywords

  • CdZnTe
  • Compensation
  • Simulation

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