TY - JOUR
T1 - Simulation of compensated and overcompensated Cd1-xZn xTe
AU - Ruzin, A.
PY - 2013
Y1 - 2013
N2 - Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.
AB - Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.
KW - CdZnTe
KW - Compensation
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=84887826772&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2012.10.101
DO - 10.1016/j.nima.2012.10.101
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:84887826772
SN - 0168-9002
VL - 718
SP - 361
EP - 362
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ER -