Simulation of compensated and overcompensated Cd1-xZn xTe

A. Ruzin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.


  • CdZnTe
  • Compensation
  • Simulation


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