Simulating downscaling of ohmic contacts on wide-bandgap low-resistivity semiconductors

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Abstract

This paper tackles the issue of downscaling of an ohmic contact from the infinite approximation to nanometer dimensions. Using the finite-element simulation program, it is shown that small-size ohmic contacts on a wide-bandgap semiconductor exhibit nonlinear current-voltage dependence in case velocity saturation is introduced. Furthermore, the dependence becomes asymmetrical around zero bias. In addition, it is shown that in small-size contacts, a nonlocal tunneling is bound to occur even in pure ohmic contacts. This may explain the absence of linear I- V curves in the reported experiments with nanometer-scale contacts.

Original languageEnglish
Article number6183507
Pages (from-to)1668-1671
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number6
DOIs
StatePublished - 2012

Keywords

  • CdZnTe
  • nanocontacts
  • ohmic contacts
  • wide-bandgap semiconductors

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