Simplified model of 1/f noise in mps transistor valid in all regions of inversion

A. Kornfeld; V. Altschul; Y. Shacham-Diamand

doi:10.1109/EEIS.1989.720013

Simplified model of 1/f noise in mps transistor valid in all regions of inversion

A. Kornfeld, V. Altschul, Y. Shacham-Diamand

Technion-Israel Institute of Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

A simplified model of the 1/f noise in MOST based on the modified McWhorter's theory is proposed. The new method is similar to the approach suggested by G. Reimbold [1] but results in the explicit dependence of the noise spectrum on the voltage biases and process parameters. Furthermore, the resulting expressions are valid in all the regions of the channel inversion. The approximate solution is in agreement with a more complex charge sheet model and are consistent with the previously published experimental results on the 1/f noise.

Original language	English
DOIs	https://doi.org/10.1109/EEIS.1989.720013
State	Published - 1989
Externally published	Yes
Event	16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989 - Tel-Aviv, Israel Duration: 7 Mar 1989 → 9 Mar 1989

Conference

Conference	16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989
Country/Territory	Israel
City	Tel-Aviv
Period	7/03/89 → 9/03/89

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10.1109/EEIS.1989.720013

Cite this

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abstract = "A simplified model of the 1/f noise in MOST based on the modified McWhorter's theory is proposed. The new method is similar to the approach suggested by G. Reimbold [1] but results in the explicit dependence of the noise spectrum on the voltage biases and process parameters. Furthermore, the resulting expressions are valid in all the regions of the channel inversion. The approximate solution is in agreement with a more complex charge sheet model and are consistent with the previously published experimental results on the 1/f noise.",

author = "A. Kornfeld and V. Altschul and Y. Shacham-Diamand",

note = "Publisher Copyright: {\textcopyright} 1990 IEEE.; 16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989 ; Conference date: 07-03-1989 Through 09-03-1989",

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AB - A simplified model of the 1/f noise in MOST based on the modified McWhorter's theory is proposed. The new method is similar to the approach suggested by G. Reimbold [1] but results in the explicit dependence of the noise spectrum on the voltage biases and process parameters. Furthermore, the resulting expressions are valid in all the regions of the channel inversion. The approximate solution is in agreement with a more complex charge sheet model and are consistent with the previously published experimental results on the 1/f noise.

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Simplified model of 1/f noise in mps transistor valid in all regions of inversion

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