TY - GEN
T1 - Silicon dosimeters based on Floating Gate Sensor
T2 - 20th IEEE Mediterranean Electrotechnical Conference, MELECON 2020
AU - Gatti, U.
AU - Calligaro, C.
AU - Parlato, A.
AU - Tomarchio, E. A.G.
AU - Pikhay, E.
AU - Roizin, Y.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/6
Y1 - 2020/6
N2 - A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Radiation-Hardened-By-Design (RHBD) approach guarantees that the absorbed dose does not degrade the circuitry.
AB - A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Radiation-Hardened-By-Design (RHBD) approach guarantees that the absorbed dose does not degrade the circuitry.
KW - Analog-to-Digital converter
KW - Dosimeter
KW - Floating Gate MOS
KW - current-to-voltage interfaces
KW - edgeless transistors (ELT)
KW - radiation hardening by design (RHBD)
KW - total ionizing dose (TID)
UR - http://www.scopus.com/inward/record.url?scp=85089273961&partnerID=8YFLogxK
U2 - 10.1109/MELECON48756.2020.9140654
DO - 10.1109/MELECON48756.2020.9140654
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AN - SCOPUS:85089273961
T3 - 20th IEEE Mediterranean Electrotechnical Conference, MELECON 2020 - Proceedings
SP - 388
EP - 392
BT - 20th IEEE Mediterranean Electrotechnical Conference, MELECON 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 15 June 2020 through 18 June 2020
ER -