Abstract
The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB6 thin films are reported. We find that the AMR changes sign from negative (ρ||<ρ¥) at high temperatures to positive (ρ||>ρ¥) at low temperatures. The temperature, Ts, at which this sign change occurs, decreases with increasing film thickness t and Ts vanishes for t> 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.
Original language | English |
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Article number | 085112 |
Journal | Physical Review B |
Volume | 95 |
Issue number | 8 |
DOIs | |
State | Published - 9 Feb 2017 |